Name: IPP16CN10NGXKSA1, Trans MOSFET N-CH 100V 53A Automotive 3-Pin(3+Tab) TO-220 Tube
SKU: IPP16CN10NGXKSA1

Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 100V 53A (Tc) 100W (Tc) сквозное отверстие PG-TO220-3

Подробное описание

Вес и габариты
base product number	IPP16CN10 ->
current - continuous drain (id) @ 25в°c	53A (Tc)
drain to source voltage (vdss)	100V

120 ₽

– +

Бонус: 2.4 !

Бонусная программа

Итого: 120 ₽

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Semiconductor - Discrete > Transistors > FET - MOSFETN-канал 100V 53A (Tc) 100W (Tc) сквозное отверстие PG-TO220-3

Вес и габариты
base product number	IPP16CN10 ->
current - continuous drain (id) @ 25в°c	53A (Tc)
drain to source voltage (vdss)	100V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	48nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	3220pF @ 50V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-220-3
power dissipation (max)	100W (Tc)
rds on (max) @ id, vgs	16.5mOhm @ 53A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	OptiMOSв„ў ->
supplier device package	PG-TO220-3
technology	MOSFET (Metal Oxide)
vgs (max)	В±20V
vgs(th) (max) @ id	4V @ 61ВµA

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