IPN80R2K4P7ATMA1, Силовой МОП-транзистор, N Канал, 800 В, 2.5 А, 2 Ом, SOT-223, Surface Mount

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Артикул: IPN80R2K4P7ATMA1
USB-C Chargers & AdaptersInfineon Technologies offers tailor-made semiconductors considering customers" priorities - price/performance vs. (ultra) high power density. The portfolio comprises the entire USB-C source product chain, ranging from HV/LV power switches to PWM controllers, USB-C controllers for power delivery as well as ESD protection devices.
Вес и габариты
channel mode:Enhancement
configuration:Single
factory pack quantity: factory pack quantity:3000
180
+
Бонус: 3.6 !
Бонусная программа
Итого: 180
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USB-C Chargers & AdaptersInfineon Technologies offers tailor-made semiconductors considering customers" priorities - price/performance vs. (ultra) high power density. The portfolio comprises the entire USB-C source product chain, ranging from HV/LV power switches to PWM controllers, USB-C controllers for power delivery as well as ESD protection devices.
Вес и габариты
channel mode:Enhancement
configuration:Single
factory pack quantity: factory pack quantity:3000
fall time:30 ns
id - continuous drain current:2.5 A
manufacturer:Infineon
maximum operating temperature:+150 C
minimum operating temperature:-55 C
mounting style:SMD/SMT
number of channels:1 Channel
package/case:SOT-223-3
packaging:Reel, Cut Tape
part # aliases:IPN80R2K4P7 SP001664994
pd - power dissipation:500 mW
product category:MOSFET
product type:MOSFET
qg - gate charge:7.5 nC
rds on - drain-source resistance:2 Ohms
rise time:10 ns
subcategory:MOSFETs
technology:Si
transistor polarity:N-Channel
transistor type:1 N-Channel
typical turn-off delay time:40 ns
typical turn-on delay time:8 ns
vds - drain-source breakdown voltage:800 V
вес, г0.01
vgs - gate-source voltage:-30 V, +30 V
vgs th - gate-source threshold voltage:3.5 V
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