Name: IPD70P04P409ATMA1, Trans MOSFET P-CH 40V 73A Automotive 3-Pin(2+Tab) DPAK T/R
SKU: IPD70P04P409ATMA1

Diodes, Transistors and Thyristors\FET Transistors\MOSFETsTrans MOSFET P-CH 40V 73A Automotive 3-Pin(2+Tab) DPAK T/R

Подробное описание

360 ₽

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Diodes, Transistors and Thyristors\FET Transistors\MOSFETsTrans MOSFET P-CH 40V 73A Automotive 3-Pin(2+Tab) DPAK T/R

Вес и габариты
automotive	Yes
channel mode	Enhancement
channel type	P
configuration	Single
eccn (us)	EAR99
eu rohs	Compliant with Exemption
maximum continuous drain current (a)	73
maximum diode forward voltage (v)	1.3
maximum drain source resistance (mohm)	8.9 10V
maximum drain source voltage (v)	40
maximum gate source leakage current (na)	100
maximum gate source voltage (v)	±20
maximum gate threshold voltage (v)	4
maximum idss (ua)	1
maximum junction ambient thermal resistance on pcb (°c/w)	62
maximum operating temperature (°c)	175
maximum positive gate source voltage (v)	20
maximum power dissipation (mw)	75000
maximum pulsed drain current @ tc=25°c (a)	292
minimum gate threshold voltage (v)	2
minimum operating temperature (°c)	-55
mounting	Surface Mount
number of elements per chip	1
operating junction temperature (°c)	-55 to 175
packaging	Tape and Reel
part status	LTB
pcb changed	2
pin count	3
ppap	Unknown
process technology	OptiMOS
product category	Power MOSFET
standard package name	TO-252
supplier package	DPAK
tab	Tab
typical fall time (ns)	31
typical gate charge @ 10v (nc)	54
typical gate charge @ vgs (nc)	54 10V
typical input capacitance @ vds (pf)	3700 25V
typical output capacitance (pf)	1400
typical rise time (ns)	12
typical turn-off delay time (ns)	24
typical turn-on delay time (ns)	19

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