Name: IPD12CN10NGATMA1, Trans MOSFET N-CH 100V 67A Automotive 3-Pin(2+Tab) DPAK T/R
SKU: IPD12CN10NGATMA1

Diodes, Transistors and Thyristors\FET Transistors\MOSFETsTrans MOSFET N-CH 100V 67A Automotive 3-Pin (2 Tab) DPAK T/R

Подробное описание

500 ₽

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Бонус: 10 !

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Итого: 500 ₽

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Diodes, Transistors and Thyristors\FET Transistors\MOSFETsTrans MOSFET N-CH 100V 67A Automotive 3-Pin (2 Tab) DPAK T/R

Вес и габариты
automotive	Unknown
channel mode	Enhancement
channel type	N
configuration	Single
eccn (us)	EAR99
eu rohs	Compliant with Exemption
lead shape	Gull-wing
maximum continuous drain current (a)	67
maximum drain source resistance (mohm)	12.4 10V
maximum drain source voltage (v)	100
maximum gate source leakage current (na)	100
maximum gate source voltage (v)	±20
maximum gate threshold voltage (v)	4
maximum idss (ua)	1
maximum operating temperature (°c)	175
maximum power dissipation (mw)	125000
minimum operating temperature (°c)	-55
mounting	Surface Mount
number of elements per chip	1
packaging	Tape and Reel
part status	Active
pcb changed	2
pin count	3
ppap	Unknown
process technology	OptiMOS 2
product category	Power MOSFET
standard package name	TO-252
supplier package	DPAK
tab	Tab
typical fall time (ns)	8
typical gate charge @ 10v (nc)	49
typical gate charge @ vgs (nc)	49 10V
typical input capacitance @ vds (pf)	3250 50V
typical rise time (ns)	21
typical turn-off delay time (ns)	32
typical turn-on delay time (ns)	17

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