Name: IPD060N03LGATMA1, Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK T/R
SKU: IPD060N03LGATMA1

Semiconductor - Discrete > Transistors > FET - MOSFET

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51 ₽

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Semiconductor - Discrete > Transistors > FET - MOSFET

Вес и габариты
automotive	No
channel mode	Enhancement
channel type	N
configuration	Single
eccn (us)	EAR99
eu rohs	Compliant with Exemption
hts	8541.29.00.95
maximum continuous drain current (a)	50
maximum drain source resistance (mohm)	6@10V
maximum drain source voltage (v)	30
maximum gate source voltage (v)	±20
maximum operating temperature (°c)	175
maximum power dissipation (mw)	56000
military	No
minimum operating temperature (°c)	-55
mounting	Surface Mount
number of elements per chip	1
package height	2.3
package length	6.5
package width	6.22
packaging	Tape and Reel
part status	Active
pcb changed	2
pin count	3
process technology	OptiMOS
product category	Power MOSFET
standard package name	TO-252
supplier package	DPAK
tab	Tab
typical fall time (ns)	3
typical gate charge @ 10v (nc)	22
typical gate charge @ vgs (nc)	22@10V\|10.8@4.5V
typical input capacitance @ vds (pf)	1700@15V
typical rise time (ns)	3
typical turn-off delay time (ns)	20
typical turn-on delay time (ns)	5

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