IPB60R360P7ATMA1, Силовой МОП-транзистор, N Channel, 600 В, 9 А, 0.305 Ом, TO-263 (D2PAK), Surface M

Полупроводники - Дискретные\МОП-транзисторы\Одиночные МОП-транзисторы600V CoolMOS™ P7 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle suitable for use in PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC silverbox, adapter, LCD & PDP TV, lighting, server, telecom and UPS.
• Suitable for hard and soft switching due to an outstanding commutation ruggedness• Significant reduction of switching and conduction losses• Excellent ESD robustness >2KV (HBM) for all products• Best in class RDS(on)/package• Ease of use and fast design-in through low ringing tendency and usage across PFC and PWM stages• Simplified thermal management due to low switching and conduction losses• Increased power density solutions• Suitable for a wide variety of applications and power ranges