Полевые МОП-транзисторы Infineon OptiMOS ™ 3, 100 В и более

Подробное описание

460 ₽

– +

Бонус: 9.2 !

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Итого: 460 ₽

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Полевые МОП-транзисторы Infineon OptiMOS ™ 3, 100 В и более

Вес и габариты
channel mode	Enhancement
channel type	N
dimensions	10.31 x 9.45 x 4.57mm
height	4.57mm
length	10.31mm
maximum continuous drain current	88 A
maximum drain source resistance	11 mΩ
maximum drain source voltage	200 V
maximum gate source voltage	-20 V, +20 V
maximum gate threshold voltage	4V
maximum operating temperature	+175 °C
maximum power dissipation	300 W
minimum gate threshold voltage	2V
minimum operating temperature	-55 °C
mounting type	Surface Mount
number of elements per chip	1
package type	D2PAK (TO-263)
pin count	3
series	OptiMOS
transistor configuration	Single
transistor material	Si
typical gate charge @ vgs	65 nC @ 10 V
typical input capacitance @ vds	5340 pF @ 100 V
typical turn-off delay time	41 ns
typical turn-on delay time	18 ns
width	9.45mm

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Кнопки

IPB107N20N3GATMA1