IPB073N15N5ATMA1, Силовой МОП-транзистор, N Channel, 150 В, 114 А, 0.0056 Ом, TO-263 (D2PAK), Surfac
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Полупроводники - Дискретные\МОП-транзисторы\Одиночные МОП-транзисторыIPB073N15N5, SP001180660
• OptiMOS™ 5 power-transistor• Excellent gate charge xRDS(on) product(FOM)• Very low on-resistance RDS(on)• Very low reverse recovery charge (Qrr)• 175°C operating temperature• Qualified according to JEDEC for target application• Ideal for high-frequency switching and synchronous rectification• Halogen-free according to IEC61249-2-21
• OptiMOS™ 5 power-transistor• Excellent gate charge xRDS(on) product(FOM)• Very low on-resistance RDS(on)• Very low reverse recovery charge (Qrr)• 175°C operating temperature• Qualified according to JEDEC for target application• Ideal for high-frequency switching and synchronous rectification• Halogen-free according to IEC61249-2-21
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