N-канал, 500 В, 11,1 А (Tc), 28 Вт (Tc), сквозное отверстие, PG-TO220, полный комплект

Подробное описание

Вес и габариты
base product number	IPAN50 ->
current - continuous drain (id) @ 25в°c	11.1A (Tc)
drain to source voltage (vdss)	500V

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N-канал, 500 В, 11,1 А (Tc), 28 Вт (Tc), сквозное отверстие, PG-TO220, полный комплект

Вес и габариты
base product number	IPAN50 ->
current - continuous drain (id) @ 25в°c	11.1A (Tc)
drain to source voltage (vdss)	500V
drive voltage (max rds on, min rds on)	13V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	18.7nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	433pF @ 100V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-40В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-220-3 Full Pack
power dissipation (max)	28W (Tc)
rds on (max) @ id, vgs	500mOhm @ 2.3A, 13V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	CoolMOSв„ў ->
supplier device package	PG-TO220 Full Pack
technology	MOSFET (Metal Oxide)
vgs (max)	В±20V
vgs(th) (max) @ id	3.5V @ 200ВµA

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IPAN50R500CEXKSA1, Trans MOSFET N-CH 500V 11.1A 3-Pin(3+Tab) TO-220FP Tube