Name: IPA80R1K4CEXKSA2, Trans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) TO-220FP Tube
SKU: IPA80R1K4CEXKSA2

Semiconductor - Discrete > Transistors > FET - MOSFETTrans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) TO-220FP Tube

Подробное описание

150 ₽

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Бонус: 3 !

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Итого: 150 ₽

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Semiconductor - Discrete > Transistors > FET - MOSFETTrans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) TO-220FP Tube

Вес и габариты
automotive	No
channel mode	Enhancement
channel type	N
configuration	Single
eccn (us)	ear99
eu rohs	compliant
lead shape	Through Hole
maximum continuous drain current (a)	3.9
maximum drain source resistance (mohm)	1400 10V
maximum drain source voltage (v)	800
maximum gate source leakage current (na)	100
maximum gate source voltage (v)	20
maximum gate threshold voltage (v)	3.9
maximum idss (ua)	10
maximum operating temperature (°c)	150
maximum power dissipation (mw)	31000
minimum operating temperature (°c)	-40
mounting	Through Hole
number of elements per chip	1
packaging	Tube
part status	active
pcb changed	3
pin count	3
ppap	No
process technology	CoolMOS CE
product category	Power MOSFET
standard package name	TO-220
supplier package	TO-220FP
tab	Tab
typical fall time (ns)	12
typical gate charge @ 10v (nc)	23
typical gate charge @ vgs (nc)	23 10V
typical input capacitance @ vds (pf)	570 100V
typical rise time (ns)	15
typical turn-off delay time (ns)	72
typical turn-on delay time (ns)	25

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