Name: IPA60R190P6XKSA1, Транзистор: N-MOSFET, полевой, 600В, 20,2А, 34Вт, TO220FP
SKU: IPA60R190P6XKSA1

N-канал, 600 В, 20,2 А (Tc), 34 Вт (Tc), сквозное отверстие, PG-TO220-FP

Подробное описание

Вес и габариты
base product number	IPA60R190 ->
current - continuous drain (id) @ 25в°c	20.2A (Tc)
drain to source voltage (vdss)	600V

460 ₽

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Бонус: 9.2 !

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Итого: 460 ₽

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N-канал, 600 В, 20,2 А (Tc), 34 Вт (Tc), сквозное отверстие, PG-TO220-FP

Вес и габариты
base product number	IPA60R190 ->
current - continuous drain (id) @ 25в°c	20.2A (Tc)
drain to source voltage (vdss)	600V
drive voltage (max rds on, min rds on)	10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	37nC @ 10V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	1750pF @ 100V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tube
package / case	TO-220-3 Full Pack
power dissipation (max)	34W (Tc)
rds on (max) @ id, vgs	190mOhm @ 7.6A, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
series	CoolMOSв„ў P6 ->
supplier device package	PG-TO220-FP
technology	MOSFET (Metal Oxide)
вес, г	2.17
vgs (max)	В±20V
vgs(th) (max) @ id	4.5V @ 630Вµ

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