IPA60R160P7XKSA1

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Транзисторы и сборки MOSFETкол-во в упаковке: 10, корпус: TO220, АБ600V CoolMOS P7 Power TransistorsInfineon 600V CoolMOS P7 Power Transistors are 7th generation devices that utilise revolutionary technology for high-voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast-switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, an...
Вес и габариты
channel mode:Enhancement
configuration:Single
factory pack quantity: factory pack quantity:500
980
+
Бонус: 19.6 !
Бонусная программа
Итого: 980
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Транзисторы и сборки MOSFETкол-во в упаковке: 10, корпус: TO220, АБ600V CoolMOS P7 Power TransistorsInfineon 600V CoolMOS P7 Power Transistors are 7th generation devices that utilise revolutionary technology for high-voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast-switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, an outstandingly robust body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler. Learn more
Вес и габариты
channel mode:Enhancement
configuration:Single
factory pack quantity: factory pack quantity:500
fall time:5.8 ns
id - continuous drain current:23.8 A
manufacturer:Infineon
maximum operating temperature:+150 C
minimum operating temperature:-55 C
mounting style:Through Hole
number of channels:1 Channel
package/case:TO-220-3
packaging:Tube
part # aliases:IPA60R160P7 SP001866014
pd - power dissipation:26 W
product category:MOSFET
product type:MOSFET
qg - gate charge:44 nC
rds on - drain-source resistance:374 mOhms
rise time:7.6 ns
subcategory:MOSFETs
technology:Si
transistor polarity:N-Channel
typical turn-off delay time:40 ns
typical turn-on delay time:12.5 ns
vds - drain-source breakdown voltage:600 V
вес, г3.022
vgs - gate-source voltage:-20 V, +20 V
vgs th - gate-source threshold voltage:4 V
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