Discrete Semiconductor Products\Transistors - FETs, MOSFETs - Single1200V 45A (Tc) 282W (Tc) Поверхностный монтаж D2PAK (7 выводов)

Подробное описание

Вес и габариты
current - continuous drain (id) @ 25в°c	45A (Tc)
drain to source voltage (vdss)	1200V
eccn	EAR99

8 230 ₽

– +

Бонус: 164.6 !

Бонусная программа

Итого: 8 230 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - Single1200V 45A (Tc) 282W (Tc) Поверхностный монтаж D2PAK (7 выводов)

Вес и габариты
current - continuous drain (id) @ 25в°c	45A (Tc)
drain to source voltage (vdss)	1200V
eccn	EAR99
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	3091pF @ 800V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	175В°C (TJ)
package	Tube
package / case	TO-263-8, DВІPak (7 Leads + Tab), TO-263CA
power dissipation (max)	282W (Tc)
rds on (max) @ id, vgs	60mOhm @ 20A
rohs status	RoHS Compliant
supplier device package	D2PAK (7-Lead)
technology	SiC (Silicon Carbide Junction Transistor)

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Кнопки

GA20JT12-263