Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 1200V 41A (Tc) 207W (Tc) сквозное отверстие TO-247-3

Подробное описание

Вес и габариты
current - continuous drain (id) @ 25в°c	41A (Tc)
drain to source voltage (vdss)	1200V
drive voltage (max rds on, min rds on)	15V

2 500 ₽

– +

Бонус: 50 !

Бонусная программа

Итого: 2 500 ₽

Купить

Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 1200V 41A (Tc) 207W (Tc) сквозное отверстие TO-247-3

Вес и габариты
current - continuous drain (id) @ 25в°c	41A (Tc)
drain to source voltage (vdss)	1200V
drive voltage (max rds on, min rds on)	15V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	54nC @ 15V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	1560pF @ 800V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-247-3
power dissipation (max)	207W (Tc)
rds on (max) @ id, vgs	90mOhm @ 20A, 15V
rohs status	RoHS Compliant
series	G3Rв„ў ->
supplier device package	TO-247-3
technology	SiCFET (Silicon Carbide)
vgs (max)	В±15V
vgs(th) (max) @ id	2.69V @ 7.5mA

Отзывов нет

Кнопки

G3R75MT12D