Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-Channel 3300V 35A Surface Mount TO-263-7

Подробное описание

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	35A
drain to source voltage (vdss)	3300V

22 950 ₽

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Итого: 22 950 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-Channel 3300V 35A Surface Mount TO-263-7

Вес и габариты
california prop 65	Warning Information
current - continuous drain (id) @ 25в°c	35A
drain to source voltage (vdss)	3300V
drive voltage (max rds on, min rds on)	20V
fet type	N-Channel
gate charge (qg) (max) @ vgs	145nC @ 20V
input capacitance (ciss) (max) @ vds	3706pF @ 1000V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-263-8, DВІPak (7 Leads + Tab), TO-263CA
rds on (max) @ id, vgs	156mOhm @ 20A, 20V
rohs status	RoHS Compliant
series	G2Rв„ў ->
supplier device package	TO-263-7
technology	SiCFET (Silicon Carbide)
vgs (max)	+25V, -10V

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G2R120MT33J