Name: G2R1000MT17J, G2R1000MT17J -GENESIC SEMICONDUCTOR - Silicon Carbide MOSFET, Single, N Канал, 4 А, 1.
SKU: G2R1000MT17J

N-канал 1700V 3A (Tc) 54W (Tc) поверхностный монтаж TO-263-7

Подробное описание

Вес и габариты
current - continuous drain (id) @ 25в°c	3A (Tc)
drain to source voltage (vdss)	1700V
drive voltage (max rds on, min rds on)	20V

1 640 ₽

– +

Бонус: 32.8 !

Бонусная программа

Итого: 1 640 ₽

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N-канал 1700V 3A (Tc) 54W (Tc) поверхностный монтаж TO-263-7

Вес и габариты
current - continuous drain (id) @ 25в°c	3A (Tc)
drain to source voltage (vdss)	1700V
drive voltage (max rds on, min rds on)	20V
eccn	EAR99
fet type	N-Channel
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	139pF @ 1000V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-263-8, DВІPak (7 Leads + Tab), TO-263CA
power dissipation (max)	54W (Tc)
rds on (max) @ id, vgs	1.2Ohm @ 2A, 20V
rohs status	RoHS Compliant
series	G2Rв„ў ->
supplier device package	TO-263-7
technology	SiCFET (Silicon Carbide)
вес, г	1.393
vgs (max)	+20V, -10V
vgs(th) (max) @ id	4V @ 2mA

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