Name: G2R1000MT17D, Транзистор: N-MOSFET; SiC; полевой; 1,7кВ; 4А; Idm: 8А; 53Вт; TO247-3
SKU: G2R1000MT17D

N-канал 1700V 4A (Tc) 53W (Tc) сквозное отверстие TO-247-3

Подробное описание

Вес и габариты
current - continuous drain (id) @ 25в°c	4A (Tc)
drain to source voltage (vdss)	1700V
drive voltage (max rds on, min rds on)	20V

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N-канал 1700V 4A (Tc) 53W (Tc) сквозное отверстие TO-247-3

Вес и габариты
current - continuous drain (id) @ 25в°c	4A (Tc)
drain to source voltage (vdss)	1700V
drive voltage (max rds on, min rds on)	20V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	27nC @ 1000V
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	139pF @ 1000V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 175В°C (TJ)
package	Tube
package / case	TO-247-3
power dissipation (max)	53W (Tc)
rds on (max) @ id, vgs	1.2Ohm @ 2A, 20V
rohs status	RoHS Compliant
series	G2Rв„ў ->
supplier device package	TO-247-3
technology	SiCFET (Silicon Carbide)
вес, г	6.09
vgs (max)	+20V, -5V
vgs(th) (max) @ id	4V @ 2mA

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