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The FQP13N10L is a QFET® N-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
• 100% avalanche tested• 8.7nC typical low gate charge• 100pF typical low Crss
• 100% avalanche tested• 8.7nC typical low gate charge• 100pF typical low Crss
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