Вес и габариты | |
channel mode | Enhancement |
configuration | Single |
factory pack quantity | 2500 |
fall time | 40 ns |
forward transconductance - min | 6 S |
id - continuous drain current | 11 A |
manufacturer | ON Semiconductor |
maximum operating temperature | +150 C |
minimum operating temperature | -55 C |
mounting style | SMD/SMT |
number of channels | 1 Channel |
package / case | TO-252-3 |
packaging | Cut Tape or Reel |
part # aliases | FQD13N06LTM_NL |
pd - power dissipation | 2.5 W |
product category | MOSFET |
product type | MOSFET |
rds on - drain-source resistance | 115 mOhms |
rise time | 90 ns |
series | FQD13N06L |
subcategory | MOSFETs |
technology | Si |
transistor polarity | N-Channel |
transistor type | 1 N-Channel |
type | MOSFET |
typical turn-off delay time | 20 ns |
typical turn-on delay time | 8 ns |
vds - drain-source breakdown voltage | 60 V |
вес, г | 0.26 |
vgs - gate-source voltage | 20 V |