| Вес и габариты | |
| channel mode | Enhancement |
| configuration | Single |
| factory pack quantity | 2500 |
| fall time | 40 ns |
| forward transconductance - min | 6 S |
| id - continuous drain current | 11 A |
| manufacturer | ON Semiconductor |
| maximum operating temperature | +150 C |
| minimum operating temperature | -55 C |
| mounting style | SMD/SMT |
| number of channels | 1 Channel |
| package / case | TO-252-3 |
| packaging | Cut Tape or Reel |
| part # aliases | FQD13N06LTM_NL |
| pd - power dissipation | 2.5 W |
| product category | MOSFET |
| product type | MOSFET |
| rds on - drain-source resistance | 115 mOhms |
| rise time | 90 ns |
| series | FQD13N06L |
| subcategory | MOSFETs |
| technology | Si |
| transistor polarity | N-Channel |
| transistor type | 1 N-Channel |
| type | MOSFET |
| typical turn-off delay time | 20 ns |
| typical turn-on delay time | 8 ns |
| vds - drain-source breakdown voltage | 60 V |
| вес, г | 0.26 |
| vgs - gate-source voltage | 20 V |