Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleP-канал 12 В 2,6 A (Ta) 370 мВт (Ta) поверхностный монтаж ULGA004-W-1010-RA01

Подробное описание

Вес и габариты
current - continuous drain (id) @ 25в°c	2.6A (Ta)
drain to source voltage (vdss)	12V
drive voltage (max rds on, min rds on)	1.5V, 4.5V

260 ₽

– +

Бонус: 5.2 !

Бонусная программа

Итого: 260 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleP-канал 12 В 2,6 A (Ta) 370 мВт (Ta) поверхностный монтаж ULGA004-W-1010-RA01

Вес и габариты
current - continuous drain (id) @ 25в°c	2.6A (Ta)
drain to source voltage (vdss)	12V
drive voltage (max rds on, min rds on)	1.5V, 4.5V
eccn	EAR99
fet type	P-Channel
gate charge (qg) (max) @ vgs	10.7nC @ 4.5V
htsus	8541.21.0095
input capacitance (ciss) (max) @ vds	814pF @ 10V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-40В°C ~ 85В°C (TA)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	4-XFLGA, CSP
power dissipation (max)	370mW (Ta)
rds on (max) @ id, vgs	51mOhm @ 2A, 4.5V
rohs status	RoHS Compliant
supplier device package	ULGA004-W-1010-RA01
technology	MOSFET (Metal Oxide)
vgs (max)	В±8V
vgs(th) (max) @ id	1V @ 2mA

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FJ4B01120L1