ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types.

Подробное описание

Вес и габариты
channel mode	Enhancement
channel type	N
maximum continuous drain current	3.3 A

300 ₽

– +

Бонус: 6 !

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Итого: 300 ₽

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ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types.

Вес и габариты
channel mode	Enhancement
channel type	N
maximum continuous drain current	3.3 A
maximum drain source resistance	189 mΩ
maximum drain source voltage	100 V
maximum gate source voltage	-20 V, +20 V
maximum operating temperature	+150 C
maximum power dissipation	2.2 W
minimum gate threshold voltage	1V
minimum operating temperature	-55 C
mounting type	Surface Mount
number of elements per chip	1
package type	SOT-223
pin count	3
series	PowerTrench
transistor configuration	Single
transistor material	Si
typical gate charge @ vgs	4.1 nC 10 V
width	6.7mm

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Кнопки

FDT86113LZ