ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types.

Подробное описание

Вес и габариты
channel mode	Enhancement
channel type	N
maximum continuous drain current	50 A

2 000 ₽

– +

Бонус: 40 !

Бонусная программа

Итого: 2 000 ₽

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ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types.

Вес и габариты
channel mode	Enhancement
channel type	N
maximum continuous drain current	50 A
maximum drain source resistance	42 mΩ
maximum drain source voltage	250 V
maximum gate source voltage	-30 V, +30 V
maximum operating temperature	+150 C
maximum power dissipation	260 W
minimum gate threshold voltage	3V
minimum operating temperature	-55 C
mounting type	Through Hole
number of elements per chip	1
package type	TO-220
pin count	3
series	PowerTrench
transistor configuration	Single
transistor material	Si
typical gate charge @ vgs	78 nC 10 V
width	4.83mm

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Кнопки

FDP2710