FDB0165N807L, MOSFET 150V 7L JEDEC GREEN EMC

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Артикул: FDB0165N807L
Semiconductors\Discrete Semiconductors\Transistors\MOSFETN-Channel PowerTrench® MOSFETs onsemi N-Channel PowerTrench MOSFETs are produced using onsemi's advanced PowerTrench process that has been specially tailored to minimize on-state resistance and yet maintain superior switching performance. onsemi N-Channel PowerTrench MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.
Вес и габариты
channel mode:Enhancement
configuration:Single
factory pack quantity: factory pack quantity:800
2 280
+
Бонус: 45.6 !
Бонусная программа
Итого: 2 280
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Semiconductors\Discrete Semiconductors\Transistors\MOSFETN-Channel PowerTrench® MOSFETs onsemi N-Channel PowerTrench MOSFETs are produced using onsemi's advanced PowerTrench process that has been specially tailored to minimize on-state resistance and yet maintain superior switching performance. onsemi N-Channel PowerTrench MOSFETs are available in a variety of Drain to Source Voltage specifications, from 30V to 250V.
Вес и габариты
channel mode:Enhancement
configuration:Single
factory pack quantity: factory pack quantity:800
fall time:64 ns
forward transconductance - min:136 S
id - continuous drain current:310 A
manufacturer:onsemi
maximum operating temperature:+175 C
minimum operating temperature:-55 C
mounting style:SMD/SMT
number of channels:1 Channel
package/case:TO-263-7
packaging:Reel, Cut Tape, MouseReel
pd - power dissipation:300 W
product category:MOSFET
product type:MOSFET
qg - gate charge:217 nC
rds on - drain-source resistance:2.7 mOhms
rise time:104 ns
series:FDB0165N807L
subcategory:MOSFETs
technology:Si
tradename:PowerTrench
transistor polarity:N-Channel
transistor type:1 N-Channel
typical turn-off delay time:123 ns
typical turn-on delay time:68 ns
vds - drain-source breakdown voltage:80 V
вес, г1.6
vgs - gate-source voltage:-20 V, +20 V
vgs th - gate-source threshold voltage:2 V
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