FCH041N65EFL4, MOSFET 650V 76A NChn MOSFET SuperFET II, FRFET

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Артикул: FCH041N65EFL4
Semiconductors\Discrete Semiconductors\Transistors\MOSFETSuperFET® II Power MOSFETsonsemi SuperFET® II Power MOSFETs are a high voltage MOSFET family utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SuperFET II MOSFETs are suitable for various AC-DC power conversion...
Вес и габариты
channel mode:Enhancement
configuration:Single
factory pack quantity: factory pack quantity:450
3 280
+
Бонус: 65.6 !
Бонусная программа
Итого: 3 280
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Semiconductors\Discrete Semiconductors\Transistors\MOSFETSuperFET® II Power MOSFETsonsemi SuperFET® II Power MOSFETs are a high voltage MOSFET family utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SuperFET II MOSFETs are suitable for various AC-DC power conversion in switching mode operation for system miniaturization and high efficiency.
Вес и габариты
channel mode:Enhancement
configuration:Single
factory pack quantity: factory pack quantity:450
fall time:48 ns
forward transconductance - min:71.7 S
id - continuous drain current:76 A
manufacturer:onsemi
maximum operating temperature:+150 C
minimum operating temperature:-55 C
mounting style:Through Hole
number of channels:1 Channel
package/case:TO-247-4
packaging:Tube
pd - power dissipation:595 W
product category:MOSFET
product type:MOSFET
qg - gate charge:229 nC
rds on - drain-source resistance:41 mOhms
rise time:65 ns
series:FCH041N65EFL4
subcategory:MOSFETs
technology:Si
tradename:SuperFET II UniFET FRFET
transistor polarity:N-Channel
transistor type:1 N-Channel
typical turn-off delay time:175 ns
typical turn-on delay time:55 ns
vds - drain-source breakdown voltage:650 V
вес, г6
vgs - gate-source voltage:-20 V, +20 V
vgs th - gate-source threshold voltage:3 V
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