Вес и габариты
factory pack quantity	2500
fall time	8.7 ns
forward transconductance - min	2.28 S

540 ₽

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Бонус: 10.8 !

Бонусная программа

Итого: 540 ₽

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Вес и габариты
factory pack quantity	2500
fall time	8.7 ns
forward transconductance - min	2.28 S
id - continuous drain current	2.6 A
manufacturer	ON Semiconductor
maximum operating temperature	+150 C
minimum operating temperature	-55 C
mounting style	SMD/SMT
package / case	TO-252-3
packaging	Cut Tape or Reel
pd - power dissipation	39 W
product category	MOSFET
product type	MOSFET
qg - gate charge	14 nC
rds on - drain-source resistance	2.25 Ohms
rise time	6.7 ns
series	FCD2250N80Z
subcategory	MOSFETs
technology	Si
tradename	SuperFET II
transistor polarity	N-Channel
typical turn-off delay time	26 ns
typical turn-on delay time	11 ns
vds - drain-source breakdown voltage	800 V
vgs - gate-source voltage	30 V
vgs th - gate-source threshold voltage	4.5 V

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Кнопки

FCD2250N80Z