Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 350 В 120 мА (Tj) 1 Вт (Tc) сквозное отверстие TO-92 (TO-226)

Подробное описание

Вес и габариты
base product number	DN2535 ->
current - continuous drain (id) @ 25в°c	120mA (Tj)
drain to source voltage (vdss)	350V

570 ₽

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Итого: 570 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 350 В 120 мА (Tj) 1 Вт (Tc) сквозное отверстие TO-92 (TO-226)

Вес и габариты
base product number	DN2535 ->
current - continuous drain (id) @ 25в°c	120mA (Tj)
drain to source voltage (vdss)	350V
drive voltage (max rds on, min rds on)	0V
eccn	EAR99
fet feature	Depletion Mode
fet type	N-Channel
htsus	8541.29.0095
input capacitance (ciss) (max) @ vds	300pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Through Hole
operating temperature	-55В°C ~ 150В°C (TJ)
package	Bulk
package / case	TO-226-3, TO-92-3 (TO-226AA)
pcn assembly/origin	http://www.microchip.com/mymicrochip/NotificationD
pcn packaging	http://www.microchip.com/mymicrochip/NotificationD
power dissipation (max)	1W (Tc)
rds on (max) @ id, vgs	25Ohm @ 120mA, 0V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	TO-92 (TO-226)
technology	MOSFET (Metal Oxide)
vgs (max)	В±20V

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DN2535N3-G