Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleP-канал 30V 4.5A (Ta) 1.8W (Ta) Монтаж на поверхность TSOT-26

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleP-канал 30V 4.5A (Ta) 1.8W (Ta) Монтаж на поверхность TSOT-26

Вес и габариты
base product number	DMP3050 ->
channel mode	Enhancement
configuration	Single
current - continuous drain (id) @ 25в°c	4.5A (Ta)
drain to source voltage (vdss)	30V
drive voltage (max rds on, min rds on)	4.5V, 10V
eccn	EAR99
factory pack quantity	3000
fall time	12.4 ns
fet type	P-Channel
forward transconductance - min	7.2 S
gate charge (qg) (max) @ vgs	10.5nC @ 10V
htsus	8541.29.0095
id - continuous drain current	4.5 A
input capacitance (ciss) (max) @ vds	620pF @ 15V
manufacturer	Diodes Incorporated
maximum operating temperature	+150 C
minimum operating temperature	-55 C
moisture sensitivity level (msl)	1 (Unlimited)
mounting style	SMD/SMT
mounting type	Surface Mount
number of channels	1 Channel
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	SOT-23-6 Thin, TSOT-23-6
packaging	Cut Tape or Reel
pd - power dissipation	1.6 W
power dissipation (max)	1.8W (Ta)
product category	MOSFET
product type	MOSFET
qg - gate charge	10.5 nC
rds on - drain-source resistance	50 mOhms
rds on (max) @ id, vgs	50mOhm @ 4.5A, 10V
reach status	REACH Unaffected
rise time	4.9 ns
rohs status	ROHS3 Compliant
series	DMP3050
subcategory	MOSFETs
supplier device package	TSOT-26
technology	MOSFET (Metal Oxide)
transistor polarity	P-Channel
transistor type	1 P-Channel
typical turn-off delay time	28.4 ns
typical turn-on delay time	6.8 ns
vds - drain-source breakdown voltage	30 V
vgs - gate-source voltage	10 V
vgs (max)	В±25V
vgs th - gate-source threshold voltage	1 V
vgs(th) (max) @ id	2V @ 250ВµA

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DMP3050LVT-7