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Semiconductors\Discrete Semiconductors\Transistors\MOSFETTrans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R
Вес и габариты
automotiveNo
channel modeEnhancement
channel typeP
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Semiconductors\Discrete Semiconductors\Transistors\MOSFETTrans MOSFET P-CH 20V 4.2A 3-Pin SOT-23 T/R
Вес и габариты
automotiveNo
channel modeEnhancement
channel typeP
configurationSingle
continuous drain current (id) @ 25в°c4.2A
eccn (us)EAR99
eu rohsCompliant
lead shapeGull-wing
maximum continuous drain current (a)4.2
maximum drain source resistance (mohm)60 4.5V
maximum drain source voltage (v)20
maximum gate source leakage current (na)100
maximum gate source voltage (v)±8
maximum gate threshold voltage (v)0.9
maximum idss (ua)1
maximum operating temperature (°c)150
maximum power dissipation (mw)1400
minimum operating temperature (°c)-55
mountingSurface Mount
number of elements per chip1
packagingTape and Reel
part statusActive
pcb changed3
pin count3
power dissipation-max (ta=25в°c)1.4W
ppapNo
product categoryPower MOSFET
rds on - drain-source resistance60mО© @ 4.2A,4.5V
standard package nameSOT
supplier packageSOT-23
supplier temperature gradeAutomotive
transistor polarityP Channel
typical fall time (ns)23.2
typical gate charge @ vgs (nc)7.6 4.5V
typical input capacitance @ vds (pf)727 20V
typical rise time (ns)13
typical turn-off delay time (ns)53.8
typical turn-on delay time (ns)14
vds - drain-source breakdown voltage20V
vgs - gate-source voltage900mV @ 250uA
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