| Вес и габариты | |
| channel mode | Enhancement |
| configuration | Single |
| factory pack quantity | 3000 |
| id - continuous drain current | 3.9 A |
| manufacturer | DIODES INCORPORATED |
| maximum operating temperature | +150 C |
| minimum operating temperature | -55 C |
| mounting style | SMD/SMT |
| number of channels | 1 Channel |
| package / case | SOT-23-3 |
| pd - power dissipation | 1.2 W |
| product category | MOSFET |
| product type | MOSFET |
| rds on - drain-source resistance | 42.5 mOhms |
| subcategory | MOSFETs |
| technology | Si |
| transistor polarity | P-Channel |
| transistor type | 1 P-Channel |
| vds - drain-source breakdown voltage | 20 V |
| вес, г | 0.1 |
| vgs - gate-source voltage | 8 V |
| vgs th - gate-source threshold voltage | 1 V |