DMP2004K-7

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleP-канал 20 В 600 мА (Ta) 550 мВт (Ta) поверхностный монтаж SOT-23-3
Вес и габариты
aec qualified numberAEC-Q101
automotiveYes
base product numberDMP2004 ->
96
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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleP-канал 20 В 600 мА (Ta) 550 мВт (Ta) поверхностный монтаж SOT-23-3
Вес и габариты
aec qualified numberAEC-Q101
automotiveYes
base product numberDMP2004 ->
channel modeEnhancement
channel typeP
configurationSingle
continuous drain current (id) @ 25в°c600mA
current - continuous drain (id) @ 25в°c600mA (Ta)
drain to source voltage (vdss)20V
drive voltage (max rds on, min rds on)1.8V, 4.5V
eccnEAR99
eccn (us)EAR99
eu rohsCompliant
fet typeP-Channel
hts8541.29.00.95
htsus8541.21.0095
input capacitance (ciss) (max) @ vds175pF @ 16V
lead shapeGull-wing
maximum continuous drain current (a)0.6
maximum drain source resistance (mohm)900@4.5V
maximum drain source voltage (v)20
maximum gate source leakage current (na)1000
maximum gate source voltage (v)±8
maximum gate threshold voltage (v)1
maximum idss (ua)1
maximum operating temperature (°c)150
maximum power dissipation (mw)550
militaryNo
minimum operating temperature (°c)-55
moisture sensitivity level (msl)1 (Unlimited)
mountingSurface Mount
mounting typeSurface Mount
number of elements per chip1
operating temperature-55В°C ~ 150В°C (TJ)
packageTape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / caseTO-236-3, SC-59, SOT-23-3
package height0.98
package length2.9
package width1.3
packagingTape and Reel
part statusActive
pcb changed3
pin count3
power dissipation (max)550mW (Ta)
power dissipation-max (ta=25в°c)550mW
product categoryPower MOSFET
rds on - drain-source resistance900mО© @ 430mA,4.5V
rds on (max) @ id, vgs900mOhm @ 430mA, 4.5V
reach statusREACH Unaffected
rohs statusROHS3 Compliant
standard package nameSOT-23
supplier device packageSOT-23-3
supplier packageSOT-23
supplier temperature gradeAutomotive
technologyMOSFET (Metal Oxide)
transistor polarityP Channel
typical fall time (ns)19.2
typical input capacitance @ vds (pf)175(Max)@16V
typical rise time (ns)4.3
typical turn-off delay time (ns)20.2
typical turn-on delay time (ns)8.5
vds - drain-source breakdown voltage20V
vgs - gate-source voltage1V @ 250uA
vgs (max)В±8V
vgs(th) (max) @ id1V @ 250ВµA
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