Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 60 В 210 мА (Ta) 340 мВт (Ta) поверхностный монтаж SOT-23

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 60 В 210 мА (Ta) 340 мВт (Ta) поверхностный монтаж SOT-23

Вес и габариты
base product number	DMN67 ->
channel mode	Enhancement
configuration	Single
current - continuous drain (id) @ 25в°c	210mA (Ta)
drain to source voltage (vdss)	60V
drive voltage (max rds on, min rds on)	5V, 10V
eccn	EAR99
factory pack quantity	3000
fall time	5.6 ns
fet type	N-Channel
forward transconductance - min	80 mS
gate charge (qg) (max) @ vgs	0.82nC @ 10V
htsus	8541.21.0095
id - continuous drain current	210 mA
input capacitance (ciss) (max) @ vds	22pF @ 25V
manufacturer	Diodes Incorporated
maximum operating temperature	+150 C
minimum operating temperature	-55 C
moisture sensitivity level (msl)	1 (Unlimited)
mounting style	SMD/SMT
mounting type	Surface Mount
number of channels	1 Channel
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	TO-236-3, SC-59, SOT-23-3
packaging	Cut Tape or Reel
pd - power dissipation	340 mW
power dissipation (max)	340mW (Ta)
product category	MOSFET
product type	MOSFET
qg - gate charge	821 pC
rds on - drain-source resistance	1.5 Ohms
rds on (max) @ id, vgs	5Ohm @ 500mA, 10V
reach status	REACH Unaffected
rise time	3 ns
rohs status	ROHS3 Compliant
series	DMN67
subcategory	MOSFETs
supplier device package	SOT-23
technology	MOSFET (Metal Oxide)
transistor polarity	N-Channel
transistor type	1 N-Channel
typical turn-off delay time	7.6 ns
typical turn-on delay time	2.8 ns
vds - drain-source breakdown voltage	60 V
vgs - gate-source voltage	30 V
vgs (max)	В±30V
vgs th - gate-source threshold voltage	1 V
vgs(th) (max) @ id	2.5V @ 250ВµA

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Кнопки

DMN67D8L-7