Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 60 В 540 мА (Ta) 430 мВт (Ta) Поверхностный монтаж X1-DFN1212-3

Подробное описание

Вес и габариты
base product number	DMN62 ->
current - continuous drain (id) @ 25в°c	540mA (Ta)
drain to source voltage (vdss)	60V

21 ₽

– +

Бонус: 0.42 !

Бонусная программа

Итого: 21 ₽

Купить

Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 60 В 540 мА (Ta) 430 мВт (Ta) Поверхностный монтаж X1-DFN1212-3

Вес и габариты
base product number	DMN62 ->
current - continuous drain (id) @ 25в°c	540mA (Ta)
drain to source voltage (vdss)	60V
drive voltage (max rds on, min rds on)	5V, 10V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	0.87nC @ 10V
htsus	8541.21.0095
input capacitance (ciss) (max) @ vds	30.2pF @ 25V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	3-UDFN
power dissipation (max)	430mW (Ta)
rds on (max) @ id, vgs	2Ohm @ 500mA, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	X1-DFN1212-3
technology	MOSFET (Metal Oxide)
vgs (max)	В±20V
vgs(th) (max) @ id	2.5V @ 1mA

0.0

общая оценка

Всего 0 отзывов

0 отзывов

Отзывов нет

Кнопки

DMN62D0SFD-7