Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 60 В 470 мА (Ta) 390 мВт (Ta) поверхностный монтаж SOT-23

Подробное описание

Вес и габариты
base product number	DMN61 ->
current - continuous drain (id) @ 25в°c	470mA (Ta)
drain to source voltage (vdss)	60V

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 60 В 470 мА (Ta) 390 мВт (Ta) поверхностный монтаж SOT-23

Вес и габариты
base product number	DMN61 ->
current - continuous drain (id) @ 25в°c	470mA (Ta)
drain to source voltage (vdss)	60V
drive voltage (max rds on, min rds on)	3V, 5V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	0.74nC @ 5V
htsus	8541.21.0095
input capacitance (ciss) (max) @ vds	12.9pF @ 12V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	TO-236-3, SC-59, SOT-23-3
power dissipation (max)	390mW (Ta)
rds on (max) @ id, vgs	1.8Ohm @ 150mA, 5V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	SOT-23
technology	MOSFET (Metal Oxide)
vgs (max)	В±12V
vgs(th) (max) @ id	2V @ 1mA

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DMN61D8L-7