Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 60 В 300 мА (Ta) 200 мВт (Ta) поверхностный монтаж SOT-323

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 60 В 300 мА (Ta) 200 мВт (Ta) поверхностный монтаж SOT-323

Вес и габариты
base product number	DMN601 ->
channel mode	Enhancement
channel type	N
current - continuous drain (id) @ 25в°c	300mA (Ta)
drain to source voltage (vdss)	60V
drive voltage (max rds on, min rds on)	4.5V, 10V
eccn	EAR99
fet type	N-Channel
height	1mm
htsus	8541.21.0095
input capacitance (ciss) (max) @ vds	50pF @ 25V
length	2.2mm
maximum continuous drain current	300 mA
maximum drain source resistance	3 Ω
maximum drain source voltage	60 V
maximum gate source voltage	-20 V, +20 V
maximum gate threshold voltage	2.5V
maximum operating temperature	+150 °C
maximum power dissipation	200 mW
minimum operating temperature	-65 °C
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
number of elements per chip	1
operating temperature	-65В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	SC-70, SOT-323
package type	SOT-323 (SC-70)
pin count	3
power dissipation (max)	200mW (Ta)
rds on (max) @ id, vgs	2Ohm @ 500mA, 10V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	SOT-323
technology	MOSFET (Metal Oxide)
transistor configuration	Single
transistor material	Si
vgs (max)	В±20V
vgs(th) (max) @ id	2.5V @ 1mA
width	1.35mm

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Кнопки

DMN601WK-7