| Вес и габариты | |
| channel mode | Enhancement |
| configuration | Single |
| factory pack quantity | 3000 |
| fall time | 11 ns |
| id - continuous drain current | 500 mA |
| manufacturer | DIODES INCORPORATED |
| maximum operating temperature | +150 C |
| minimum operating temperature | -55 C |
| mounting style | SMD/SMT |
| number of channels | 1 Channel |
| package / case | SOT-23-3 |
| packaging | Cut Tape or Reel |
| pd - power dissipation | 540 mW |
| product category | MOSFET |
| product type | MOSFET |
| qg - gate charge | 600 pC |
| qualification | AEC-Q101 |
| rds on - drain-source resistance | 1.6 Ohms |
| rise time | 2.5 ns |
| series | DMN53 |
| subcategory | MOSFETs |
| technology | Si |
| transistor polarity | N-Channel |
| transistor type | 1 N-Channel |
| typical turn-off delay time | 19 ns |
| typical turn-on delay time | 2.7 ns |
| vds - drain-source breakdown voltage | 50 V |
| vgs - gate-source voltage | 20 V |
| vgs th - gate-source threshold voltage | 800 mV |