Вес и габариты | |
channel mode | Enhancement |
configuration | Single |
factory pack quantity | 3000 |
fall time | 11 ns |
id - continuous drain current | 500 mA |
manufacturer | Diodes Incorporated |
maximum operating temperature | +150 C |
minimum operating temperature | -55 C |
mounting style | SMD/SMT |
number of channels | 1 Channel |
package / case | SOT-23-3 |
packaging | Cut Tape or Reel |
pd - power dissipation | 360 mW |
product category | MOSFET |
product type | MOSFET |
qg - gate charge | 1.2 nC |
rds on - drain-source resistance | 1.6 Ohms |
rise time | 2.5 ns |
series | DMN53 |
subcategory | MOSFETs |
technology | Si |
transistor polarity | N-Channel |
transistor type | 1 N-Channel |
typical turn-off delay time | 18.9 ns |
typical turn-on delay time | 2.7 ns |
vds - drain-source breakdown voltage | 50 V |
vgs - gate-source voltage | 20 V |
vgs th - gate-source threshold voltage | 800 mV |