DMN3032LE-13, Trans MOSFET N-CH 30V 5.6A 4-Pin(3+Tab) SOT-223 T/R
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Артикул: DMN3032LE-13
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Semiconductor - Discrete > Transistors > FET - MOSFETTrans MOSFET N-CH 30V 5.6A 4-Pin (3 Tab) SOT-223 T/R
| Вес и габариты | |
| automotive | No |
| channel mode | Enhancement |
| channel type | N |
| configuration | Single |
| eccn (us) | EAR99 |
| eu rohs | Compliant |
| factory pack quantity | 2500 |
| fall time | 1.9 ns |
| id - continuous drain current | 5.6 A |
| lead shape | Gull-wing |
| manufacturer | Diodes Incorporated |
| maximum continuous drain current (a) | 5.6 |
| maximum drain source resistance (mohm) | 29 10V |
| maximum drain source voltage (v) | 30 |
| maximum gate source leakage current (na) | 100 |
| maximum gate source voltage (v) | ±20 |
| maximum gate threshold voltage (v) | 2 |
| maximum idss (ua) | 1 |
| maximum operating temperature | +150 C |
| maximum operating temperature (°c) | 150 |
| maximum power dissipation (mw) | 14000 |
| minimum operating temperature | -55 C |
| minimum operating temperature (°c) | -55 |
| mounting | Surface Mount |
| mounting style | SMD/SMT |
| number of channels | 1 Channel |
| number of elements per chip | 1 |
| package / case | SOT-223-4 |
| packaging | Cut Tape or Reel |
| part status | Active |
| pcb changed | 3 |
| pd - power dissipation | 14 W |
| pin count | 4 |
| ppap | No |
| product category | MOSFET |
| product type | MOSFET |
| qg - gate charge | 11.3 nC |
| rds on - drain-source resistance | 29 mOhms |
| rise time | 3.9 ns |
| series | DMN3032 |
| standard package name | SOT |
| subcategory | MOSFETs |
| supplier package | SOT-223 |
| tab | Tab |
| technology | Si |
| transistor polarity | N-Channel |
| transistor type | 1 N-Channel |
| typical fall time (ns) | 1.9 |
| typical gate charge @ 10v (nc) | 11.3 |
| typical gate charge @ vgs (nc) | 11.3 10V |
| typical input capacitance @ vds (pf) | 498 15V |
| typical rise time (ns) | 3.9 |
| typical turn-off delay time | 10 ns |
| typical turn-off delay time (ns) | 10 |
| typical turn-on delay time | 2.3 ns |
| typical turn-on delay time (ns) | 2.3 |
| vds - drain-source breakdown voltage | 30 V |
| vgs - gate-source voltage | 10 V |
| vgs th - gate-source threshold voltage | 1 V |
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Компания ООО "Телеметрия"
- Название организации: ООО "ТЕЛЕМЕТРИЯ" Юридический адрес организации: Российская Федерация, 664043, Иркутская область, г. Иркутск, ул. Маршала Конева, дом 38 ИНН 7536172565 КПП 381201001 ОГРН 1187536004215 Расчетный счет 40702810010000426573 Банк АО «Тинькофф Банк» БИК банка 044525974 ИНН банка 7710140679 Корреспондентский счет банка 30101810145250000974 Юридический адрес банка 127287, г. Москва, ул. Хуторская 2-я, д. 38А, стр. 26