Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 20 В 750 мА (Ta) 470 мВт (Ta) Поверхностный монтаж X2-DFN1006-3

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Вес и габариты
base product number	DMN2400 ->
current - continuous drain (id) @ 25в°c	750mA (Ta)
drain to source voltage (vdss)	20V

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 20 В 750 мА (Ta) 470 мВт (Ta) Поверхностный монтаж X2-DFN1006-3

Вес и габариты
base product number	DMN2400 ->
current - continuous drain (id) @ 25в°c	750mA (Ta)
drain to source voltage (vdss)	20V
drive voltage (max rds on, min rds on)	1.8V, 4.5V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	0.5nC @ 4.5V
htsus	8541.21.0095
input capacitance (ciss) (max) @ vds	36pF @ 16V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	3-XFDFN
power dissipation (max)	470mW (Ta)
rds on (max) @ id, vgs	550mOhm @ 600mA, 4.5V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	X2-DFN1006-3
technology	MOSFET (Metal Oxide)
vgs (max)	В±12V
vgs(th) (max) @ id	900mV @ 250ВµA

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DMN2400UFB4-7