Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 20 В 1,2 A (Ta) 500 мВт (Ta) поверхностный монтаж SC-59-3

Подробное описание

Вес и габариты
base product number	DMN2112 ->
current - continuous drain (id) @ 25в°c	1.2A (Ta)
drain to source voltage (vdss)	20V

86 ₽

– +

Бонус: 1.72 !

Бонусная программа

Итого: 86 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 20 В 1,2 A (Ta) 500 мВт (Ta) поверхностный монтаж SC-59-3

Вес и габариты
base product number	DMN2112 ->
current - continuous drain (id) @ 25в°c	1.2A (Ta)
drain to source voltage (vdss)	20V
drive voltage (max rds on, min rds on)	1.5V, 4.5V
eccn	EAR99
fet type	N-Channel
htsus	8541.21.0095
input capacitance (ciss) (max) @ vds	220pF @ 10V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	TO-236-3, SC-59, SOT-23-3
power dissipation (max)	500mW (Ta)
rds on (max) @ id, vgs	100mOhm @ 500mA, 4.5V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	SC-59-3
technology	MOSFET (Metal Oxide)
vgs (max)	В±8V
vgs(th) (max) @ id	1.2V @ 1mA

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Кнопки

DMN2112SN-7