Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 20 В 440 мА (Ta) 450 мВт (Ta) Поверхностный монтаж 3-X1DFN1006

Подробное описание

Вес и габариты
base product number	DMN2005 ->
current - continuous drain (id) @ 25в°c	440mA (Ta)
drain to source voltage (vdss)	20V

120 ₽

– +

Бонус: 2.4 !

Бонусная программа

Итого: 120 ₽

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Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 20 В 440 мА (Ta) 450 мВт (Ta) Поверхностный монтаж 3-X1DFN1006

Вес и габариты
base product number	DMN2005 ->
current - continuous drain (id) @ 25в°c	440mA (Ta)
drain to source voltage (vdss)	20V
drive voltage (max rds on, min rds on)	1.5V, 4V
eccn	EAR99
fet type	N-Channel
htsus	8541.21.0095
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-65В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	3-UFDFN
power dissipation (max)	450mW (Ta)
rds on (max) @ id, vgs	1.5Ohm @ 10mA, 4V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	3-X1DFN1006
technology	MOSFET (Metal Oxide)
vgs (max)	В±10V
vgs(th) (max) @ id	1.2V @ 100ВµA

Отзывов нет

Кнопки

DMN2005LPK-7