Semiconductors\Discrete Semiconductors\Transistors\MOSFET

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Вес и габариты
continuous drain current (id) @ 25в°c	540mA
power dissipation-max (ta=25в°c)	200mW
rds on - drain-source resistance	550mО© @ 540mA,4.5V

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Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Вес и габариты
continuous drain current (id) @ 25в°c	540mA
power dissipation-max (ta=25в°c)	200mW
rds on - drain-source resistance	550mО© @ 540mA,4.5V
transistor polarity	2 N Channel(Double)
vds - drain-source breakdown voltage	20V
vgs - gate-source voltage	1V @ 250uA

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Кнопки

DMN2004DWK-7