Semiconductors\Discrete Semiconductors\Transistors\MOSFETN-канал 20V 4,2A (Ta) 800 мВт (Ta) поверхностный монтаж SOT-23-3

Подробное описание

Вес и габариты
base product number	DMG2302 ->
continuous drain current (id) @ 25в°c	4.2A
current - continuous drain (id) @ 25в°c	4.2A (Ta)

91 ₽

– +

Бонус: 1.82 !

Бонусная программа

Итого: 91 ₽

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Semiconductors\Discrete Semiconductors\Transistors\MOSFETN-канал 20V 4,2A (Ta) 800 мВт (Ta) поверхностный монтаж SOT-23-3

Вес и габариты
base product number	DMG2302 ->
continuous drain current (id) @ 25в°c	4.2A
current - continuous drain (id) @ 25в°c	4.2A (Ta)
drain to source voltage (vdss)	20V
drive voltage (max rds on, min rds on)	2.5V, 4.5V
eccn	EAR99
fet type	N-Channel
gate charge (qg) (max) @ vgs	7nC @ 4.5V
htsus	8541.21.0095
input capacitance (ciss) (max) @ vds	594.3pF @ 10V
moisture sensitivity level (msl)	1 (Unlimited)
mounting type	Surface Mount
operating temperature	-55В°C ~ 150В°C (TJ)
package	Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
package / case	TO-236-3, SC-59, SOT-23-3
power dissipation (max)	800mW (Ta)
power dissipation-max (ta=25в°c)	800mW
rds on - drain-source resistance	90mО© @ 3.6A,4.5V
rds on (max) @ id, vgs	90mOhm @ 3.6A, 4.5V
reach status	REACH Unaffected
rohs status	ROHS3 Compliant
supplier device package	SOT-23-3
technology	MOSFET (Metal Oxide)
transistor polarity	N Channel
vds - drain-source breakdown voltage	20V
vgs - gate-source voltage	1V @ 50uA
vgs (max)	В±8V
vgs(th) (max) @ id	1V @ 50ВµA

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Кнопки

DMG2302U-7