Вес и габариты | |
channel mode | Enhancement |
channel type | P |
maximum continuous drain current | 460 mA |
maximum drain source resistance | 1.3 Ω |
maximum drain source voltage | 20 V |
maximum gate source voltage | -6 V, +6 V |
maximum gate threshold voltage | 1V |
maximum operating temperature | +150 C |
maximum power dissipation | 270 mW |
minimum operating temperature | -55 C |
mounting type | Surface Mount |
number of elements per chip | 1 |
package type | SOT-523(SC-89) |
pin count | 3 |
transistor configuration | Single |
transistor material | Si |
typical gate charge @ vgs | 0.58 nC 4.5 V |
width | 0.85mm |