| Вес и габариты | |
| channel mode | Enhancement |
| configuration | Dual |
| factory pack quantity | 2500 |
| fall time | 8.55 ns, 22.2 ns |
| id - continuous drain current | 8.5 A, 7 A |
| manufacturer | DIODES INCORPORATED |
| maximum operating temperature | +150 C |
| minimum operating temperature | -55 C |
| mounting style | SMD/SMT |
| number of channels | 2 Channel |
| package / case | SOIC-8 |
| packaging | Cut Tape or Reel |
| pd - power dissipation | 2.5 W |
| product | MOSFET Small Signal |
| product category | MOSFET |
| product type | MOSFET |
| qg - gate charge | 7.8 nC, 21.1 nC |
| rds on - drain-source resistance | 21 mOhms, 39 mOhms |
| rise time | 4.5 ns, 6.5 ns |
| series | DMC3021 |
| subcategory | MOSFETs |
| technology | Si |
| transistor polarity | N-Channel, P-Channel |
| transistor type | 1 N-Channel, 1 P-Channel |
| typical turn-off delay time | 26.3 ns, 50.1 ns |
| typical turn-on delay time | 5 ns, 10.1 ns |
| vds - drain-source breakdown voltage | 30 V |
| вес, г | 0.2 |
| vgs - gate-source voltage | 10 V |
| vgs th - gate-source threshold voltage | 1 V |