Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Подробное описание

Основные
вес, г	0.15
factory pack quantity: factory pack quantity:	250
manufacturer:	Texas Instruments
maximum operating temperature:	+125 C

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Semiconductors\Discrete Semiconductors\Transistors\MOSFET

Основные
вес, г	0.15
factory pack quantity: factory pack quantity:	250
manufacturer:	Texas Instruments
maximum operating temperature:	+125 C
minimum operating temperature:	-55 C
mounting style:	SMD/SMT
product category:	MOSFET
product type:	MOSFET
series:	CSD86350Q5D
subcategory:	MOSFETs
packaging:	Reel, Cut Tape
Вес и габариты
package/case:	SON-8
pd - power dissipation:	13 W
number of channels:	2 Channel
technology:	Si
configuration:	Dual
channel mode:	Enhancement
id - continuous drain current:	40 A
qg - gate charge:	10.7 nC, 25 nC
rds on - drain-source resistance:	5 mOhms, 1.1 mOhms
transistor polarity:	N-Channel
transistor type:	2 N-Channel
vds - drain-source breakdown voltage:	25 V
vgs - gate-source voltage:	-8 V, +8 V
vgs th - gate-source threshold voltage:	900 mV
typical turn-off delay time:	9 ns, 24 ns
typical turn-on delay time:	8 ns, 9 ns
forward transconductance - min:	103 S, 132 S
fall time:	2.3 ns, 21 ns
rise time:	21 ns, 23 ns

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CSD86350Q5DT, MOSFET 25-V, N channel synchronous buck NexFET power MOSFET, SON 5 mm x 6 mm power blo