CSD23203W, MOSFET CSD23203W 8 V P-chan MOSFET 6-DSBGA

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Артикул: CSD23203W
Semiconductors\Discrete Semiconductors\Transistors\MOSFETNexFET™ Power MOSFETsTexas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET...
Основные
вес, г0.01
factory pack quantity: factory pack quantity:3000
manufacturer:Texas Instruments
maximum operating temperature:+150 C
170
+
Бонус: 3.4 !
Бонусная программа
Итого: 170
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Semiconductors\Discrete Semiconductors\Transistors\MOSFETNexFET™ Power MOSFETsTexas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Основные
вес, г0.01
factory pack quantity: factory pack quantity:3000
manufacturer:Texas Instruments
maximum operating temperature:+150 C
minimum operating temperature:-55 C
mounting style:SMD/SMT
product category:MOSFET
product type:MOSFET
series:CSD23203W
subcategory:MOSFETs
packaging:Reel, Cut Tape, MouseReel
Вес и габариты
package/case:DSBGA-6
tradename:NexFET
pd - power dissipation:750 mW
number of channels:1 Channel
technology:Si
configuration:Single
channel mode:Enhancement
id - continuous drain current:3 A
qg - gate charge:6.3 nC
rds on - drain-source resistance:53 mOhms
transistor polarity:P-Channel
transistor type:1 P-Channel
vds - drain-source breakdown voltage:8 V
vgs - gate-source voltage:-6 V, +6 V
vgs th - gate-source threshold voltage:1.1 V
typical turn-off delay time:58 ns
typical turn-on delay time:14 ns
forward transconductance - min:14 S
fall time:27 ns
rise time:12 ns
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