CSD18537NKCS

Оставить отзыв
В избранноеВ сравнение
Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 60V 50A (Tc) 94W (Tc) сквозное отверстие TO-220-3
Основные
moisture sensitivity level (msl)1 (Unlimited)
mounting typeThrough Hole
operating temperature-55В°C ~ 150В°C (TJ)
packageTubeTube
440
+
Бонус: 8.8 !
Бонусная программа
Итого: 440
Купить
  • Обзор
  • Характеристики
  • Отзывы (0)
  • Реквизиты
Discrete Semiconductor Products\Transistors - FETs, MOSFETs - SingleN-канал 60V 50A (Tc) 94W (Tc) сквозное отверстие TO-220-3
Основные
moisture sensitivity level (msl)1 (Unlimited)
mounting typeThrough Hole
operating temperature-55В°C ~ 150В°C (TJ)
packageTubeTube
package / caseTO-220-3
rohs statusROHS3 Compliant
eccnEAR99
htsus8541.29.0095
reach statusREACH Affected
supplier device packageTO-220-3
base product numberCSD18537 ->
factory pack quantity: factory pack quantity:50
manufacturer:Texas Instruments
maximum operating temperature:+150 C
minimum operating temperature:-55 C
mounting style:Through Hole
product category:MOSFET
product type:MOSFET
series:CSD18537NKCS
subcategory:MOSFETs
packaging:Tube
Вес и габариты
package/case:TO-220-3
tradename:NexFET
pd - power dissipation:94 W
technologyMOSFET (Metal Oxide)
number of channels:1 Channel
technology:Si
configuration:Single
current - continuous drain (id) @ 25в°c50A (Tc)
drain to source voltage (vdss)60V
drive voltage (max rds on, min rds on)6V, 10V
fet typeN-Channel
gate charge (qg) (max) @ vgs18nC @ 10V
input capacitance (ciss) (max) @ vds1480pF @ 30V
power dissipation (max)94W (Tc)
rds on (max) @ id, vgs14mOhm @ 25A, 10V
vgs (max)В±20V
vgs(th) (max) @ id3.5V @ 250ВµA
channel mode:Enhancement
id - continuous drain current:56 A
qg - gate charge:14 nC
rds on - drain-source resistance:14 mOhms
transistor polarity:N-Channel
transistor type:1 N-Channel
vds - drain-source breakdown voltage:60 V
vgs - gate-source voltage:-20 V, +20 V
vgs th - gate-source threshold voltage:2.6 V
typical turn-off delay time:12.6 ns
typical turn-on delay time:4.5 ns
forward transconductance - min:100 S
fall time:3.9 ns
rise time:3.2 ns
Отзывов нет
Меню
0Корзина
Товар добавлен в корзину!
Товар добавлен в список сравнения
Товар добавлен в список избранных
Профиль