CSD17579Q5A, MOSFET 30-V, N channel NexFET power MOSFET, single SON 5 mm x 6 mm, 13.3 mOhm 8-VSONP

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Артикул: CSD17579Q5A
Semiconductors\Discrete Semiconductors\Transistors\MOSFETNexFET™ Power MOSFETsTexas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET...
Основные
вес, г0.08
factory pack quantity: factory pack quantity:2500
manufacturer:Texas Instruments
maximum operating temperature:+150 C
200
+
Бонус: 4 !
Бонусная программа
Итого: 200
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Semiconductors\Discrete Semiconductors\Transistors\MOSFETNexFET™ Power MOSFETsTexas Instruments NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. Texas Instruments NexFET Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.
Основные
вес, г0.08
factory pack quantity: factory pack quantity:2500
manufacturer:Texas Instruments
maximum operating temperature:+150 C
minimum operating temperature:-55 C
mounting style:SMD/SMT
product category:MOSFET
product type:MOSFET
series:CSD17579Q5A
subcategory:MOSFETs
packaging:Reel, Cut Tape, MouseReel
Вес и габариты
package/case:VSONP-8
tradename:NexFET
pd - power dissipation:36 W
number of channels:1 Channel
technology:Si
configuration:Single
channel mode:Enhancement
id - continuous drain current:20 A
qg - gate charge:15.1 nC
rds on - drain-source resistance:11.6 mOhms
transistor polarity:N-Channel
transistor type:1 N-Channel
vds - drain-source breakdown voltage:30 V
vgs - gate-source voltage:-20 V, +20 V
vgs th - gate-source threshold voltage:1 V
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