- Обзор
- Характеристики
- Отзывы (0)
- Реквизиты
Texas Instruments NexFET™ Power MOSFET The Texas Instruments N-Channel NexFET™ Power MOSFET series features low on resistance coupled with extremely low gate charge, making it ideal for high efficiency/high frequency switching converter and Synchronous FET applications. The TI NexFET Power MOSFET combines vertical current flow with a lateral power MOSFET for a level of performance not previously possible with existing silicon platforms. The TI NexFET minimizes losses in power conversion applications and allows designers to achieve 90-percent power supply efficiencies from light to full loads with high output currents and low duty cycles.
Отзывов нет






![PDTC143ZU,115, Транзистор NPN Digital, R1=4.7 кОм, R2= 47 кОм [SOT-323] PDTC143ZU,115, Транзистор NPN Digital, R1=4.7 кОм, R2= 47 кОм [SOT-323]](/wa-data/public/shop/products/00/50/185000/images/221183/221183.300x0.jpg)
![IRFD123PBF, Транзистор, MOSFET, N-канал, 100В, 1.3А [HVMDIP] IRFD123PBF, Транзистор, MOSFET, N-канал, 100В, 1.3А [HVMDIP]](/wa-data/public/shop/products/63/01/200163/images/233860/233860.300x0.jpg)









